Opportunities for Group IV Nanowire Devices in Si CMOS Technology

Emanuel Tutuc; Sanjay Banerjee; J. Nah; Kamran Varahramyan; N. Jain; D. Ferrer

doi:10.1149/1.2986832

ECS Transactions

Opportunities for Group IV Nanowire Devices in Si CMOS Technology

Emanuel Tutuc¹, Sanjay Banerjee², J. Nah², Kamran Varahramyan², N. Jain² and D. Ferrer²

© 2008 ECS - The Electrochemical Society
ECS Transactions, Volume 16, Number 10 Citation Emanuel Tutuc et al 2008 ECS Trans. 16 735 DOI 10.1149/1.2986832

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¹ The University of Texas at Austin

² Univ of Texas at Austin

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Abstract

We discuss several group IV semiconductor nanowire devices, which are compatible and may outperform conventional CMOS devices. These include gate-all-around nanowire devices, Ge/Si core-shell structures, and tunneling field effect transistors.

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