Abstract
In order to demonstrate the application of surface sensitive techniques in microelectronics-related model interface studies, two such examples of recent work at the SSL are briefly presented. The first involves the controlled growth of the interface between a conjugated organic semiconducting film (Ooct-OPV5, an oligomer of PPV) and p-doped Si(111), which is relevant to hybrid organic/inorganic microelectronic devices. The second example concerns the comparative study of in situ grown metal/6H-SiC (0001) interfaces using a series of metals with different work functions, which is relevant to Schottky contact formation in devices. Using a combination of spectroscopic and other techniques in each case, information concerning film composition and electronic structure, interfacial chemistry, band bending and interface dipole formation are obtained, leading to band line-up diagrams, from which band offsets or carrier injection barriers can be estimated.