Improved Current Drivability and Gate Stack Integrity using Buried SiC Layer for Strained Si/SiGe Channel Devices

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© 2007 ECS - The Electrochemical Society
, , Citation Hui Zang et al 2007 ECS Trans. 6 105 DOI 10.1149/1.2727393

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1 National University of Singapore

2 Institute of Microelectronics

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1938-5862/6/1/105

Abstract

We report a novel Si/Si1-xGex channel with improved current drivability and reliability using a buried Si0.99C0.01. It is also found that the Si/Si1-xGex/Si0.99C0.01 structure is effective in reducing Ge out-diffusion which helps to improve gate dielectric interface quality.

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