Modeling of SiGe Devices Using a Self-Consistent Full-Band Device Simulator Which Properly Takes into Account Quantum-Mechanical Size Quantization and Mobility Enhancement

We examine performance enhancement of p-channel SiGe devices using our recently developed particle-based device simulator that takes into account self-consistently the bandstructure and the quantum mechanical space-quantization and mobility enhancement (due to the smaller 2D density of states function) effects. We find surface roughness to be the dominant factor for the bad performance of p-channel SiGe devices when compared to conventional bulk p-MOSFETs at high bias conditions. At low and moderate bias conditions, when surface-roughness does not dominate the carrier transport, we observe performance enhancement in the operation of p-channel SiGe MOSFETs versus their conventional counter-parts.