Abstract
The effect of Pd addition to the Al alloy on the photoelectrochemical response is described. The oxide films are characterized by photoelectrochemical methods. The addition of Pd decreases the photocurrent during illumination. The properties of the surface oxide films on thin Al‐Pd‐Si and Al‐Si alloy films are discussed. The surface oxide film property is related to the increased corrosion resistance of Al‐Pd‐Si. A model of the aluminum oxide film structure on the Al‐Pd‐Si film is also proposed.