Abstract
The reactive sputtering of titanium was studied in an rf plasma containing argon and oxygen. The kinetics of the reactive sputtering process and the properties of deposited titanium oxide films were studied as a function of the oxygen partial pressure in the plasma, bias voltage, and rf power. Models for the transient oxidation of titanium were explored in relation to oxidation mechanisms. Model parameters were determined from experimental studies. The sputter etch rate of the titanium target reached a maximum at an oxygen mole fraction of 0.002. The sputter deposition rate was found to decrease sharply at a critical oxygen mole fraction equal to 0.007, corresponding to the onset of target oxidation. The time dependence of the target oxidation process was found to be in qualitative agreement with a reactive sputter‐oxidation model.