Abstract
films used as gate electrodes and interconnects were deposited on oxidized Si substrates via reactions between
and 
. At high temperatures, 
generated by reactions involving 
, 
, and 
reacts with Si to form volatile 
, 
, 
, and 
; thus Si is etched away and is not available to form 
, resulting in deposited film consisting of only metallic Mo. At low temperatures, the deposited film consists of 
which is thermodynamically stable. The deposited films show characteristics (resistivity, crystal structure, and so forth) similar to those of 
films deposited by sputtering. Chlorine in the deposited films has a gettering effect for mobile ions such as Na+.