Abstract
Oxygen incorporation into Czochralski silicon crystals during crystal growth is influenced by reactions at the crucible interface. In the present study it was found that different dopants have different effects on these reactions, both in sealed ampuls and in Czochralski crucibles. Different reaction products and morphologies are formed along the interface depending on dopant types and levels. It was concluded that some of these reactions can affect the oxygen concentration in the melt. The dopants investigated were B, Al, Ga, In, Ge, Sn, P, As, Sb, and Bi.