Abstract
Iridium thin films were deposited by pulse CVD with using dicarbonyl(acetylacetonato)iridium Ir(acac)(CO)2 as a precursor. Precursor was characterized by DTA and mass spectrometry; effusion Knudsen method was used for determination of thermodynamic parameters of sublimation process. By means of high temperature mass spectrometry precursor vapor decomposition was studied in vacuum, oxygen and hydrogen. Analysis of gaseous by-product composition has shown that the main products of reaction are acetylacetone, СО, СО2 and С2Н3О of presumably radical character. Mechanism of thermal transformations of precursor molecules at interaction with surface was supposed. Ir films deposited at substrate temperature between 240 and 300{degree sign}C were characterized by XPS and AFM. Ir in the films is in metal and chemically associated states, size of Ir particles is 4-20 nm.