Electrical Properties of Semiconducting AlSb

Measurements of some of the electrical properties of the compound indicate semiconducting characteristics comparable with those reported for silicon. Data were taken on the electrical resistivity, thermoelectric power, and Hall voltage as a function of temperature over the range from 80° to 1200°K. The energy band separation, as determined from the temperature dependence of the conductivity, is 1.5 to 1.6 ev. Mobilities of electrons and holes are approximately equal and are greater than 100 cm²/volt‐sec at room temperature. Rectification characteristics are given for both P‐ and N‐type samples of various resistivities. Both photovoltaic and photodiode effects were observed.