Impurity Distribution in Single Crystals: III . Impurity Heterogeneities in Single Crystals Rotated during Pulling from the Melt

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© 1967 ECS - The Electrochemical Society
, , Citation K. Morizane et al 1967 J. Electrochem. Soc. 114 738 DOI 10.1149/1.2426720

1945-7111/114/7/738

Abstract

The characteristics of crystal growth from the melt by a Czochralski‐type technique under rotation were investigated with experimental arrangements in which the thermal and rotational axes did not coincide. A pronounced type of impurity heterogeneity was studied in particular. It was attributed to a periodic remelt process associated with rotation and was shown to be a limiting case of the normally observed rotational striations. A theoretical analysis is presented which accounts for the observed experimental results. According to this analysis the microscopic growth rate of the "core" region in crystals pulled in the 〈111〉 direction is constant, whereas the microscopic growth rate of the "off core" region undergoes pronounced periodic fluctuations as a result of the thermal asymmetry of the experimental arrangement.

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10.1149/1.2426720