Growth and Microstructure of α ‐ Al2 O 3 on β ‐ NiAl

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© 1980 ECS - The Electrochemical Society
, , Citation H. M. Hindam and W. W. Smeltzer 1980 J. Electrochem. Soc. 127 1630 DOI 10.1149/1.2129965

1945-7111/127/7/1630

Abstract

Growth of films and scales on was investigated in oxygen at 1 atm over the temperature range 1273°–1573°K. An initial sub‐microcrystalline oxide film recrystallized during its growth to a textured film containing polycrystalline ridges. Inert marker measurements demonstrated that the initial film grew by inward diffusion of oxygen. Fully developed scales contained dissolved nickel (0.5 w/o at 1473°K). Metallographic evidence indicated that these scales grew by counter‐current aluminum and oxygen boundary diffusion and aluminum lattice diffusion. Cavities, which were generated at the interface, did not influence scale growth since aluminum was transported at a sufficient sustaining rate by evaporation from the alloy substrate. The square of the average oxide grain size in a growing scale increased proportional to time. The nonparabolic growth kinetics of the scales were interpreted by a short‐circuit diffusion model.

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10.1149/1.2129965