Negative Electron Resists for Direct Device Lithography: II . Poly(Glycidyl Methacrylate‐Co‐3‐Chlorostyrene)—Lithographic Performance

Poly (glycidyl methacrylate‐co‐3‐chlorostyrene) (GMC) has been identified as a potential candidate for an electron resist to be used in direct device fabrication. It was previously reported (Part I) to have improved resolution and dry etching resistance over COP. This paper reports the results of an extensive evaluation of GMC. It was found to have a contrast of ∼1.6 and a sensitivity of 3 μC cm⁻² at 20 kV. It was found to exhibit 1.0–1.5 μm resolution with 0.6 μm films. The resist has good adhesion for wet chemical etching of thermal and aluminum. Both the alkaline and the tri‐acid aluminum etchants, are compatible with GMC. In plasma etching, the resist etches by at least a factor of 5 slower than , polysilicon, and 8% p‐glass. In anisotropic aluminum plasma etching, GMC etches at about the same rate as aluminum, but the etch rate of the former can be markedly reduced by ion implantation prior to etching.