A Quantitative Analysis of Photoinduced Capacitance Peaks in the Impedance of the n ‐ GaAs Electrode

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© 1987 ECS - The Electrochemical Society
, , Citation D. Vanmaekelbergh et al 1987 J. Electrochem. Soc. 134 891 DOI 10.1149/1.2100592

1945-7111/134/4/891

Abstract

The additional capacitance, observed under illumination of the electrode in aqueous electrolyte, was measured as a function of the electrode potential, the measuring frequency, and the light intensity. Simple relationships were found between the peak maximum, the frequency, and the light intensity, and interpreted on the basis of a model in which electron hole recombination through surface states was assumed. The information concerning the surface‐state characteristics, obtainable from such measurements, is discussed.

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10.1149/1.2100592