Properties of Fluorinated Silicon Nitride Films for Applications to Device Processes

Fluorinated silicon nitride films were deposited by plasma‐CVD from or gas mixture. The deposition rate was increased by using the latter gas system, typically as high as 50 nm/min, which was comparable to that of the conventional hydrogenated silicon nitride deposited from . The fluorinated silicon nitride exhibited (i) lower hydrogen content, (ii) higher stability against hydrogen outdiffusion, and (iii) higher thermal endurance. Successful applications as final passivation layers, diffusion or annealing masks, and gate insulator can be expected.