Surface Photovoltage and Deep Level Transient Spectroscopy Measurement of the Fe Impurities in Front‐End Operations of the IC CMOS Process

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© 1995 ECS - The Electrochemical Society
, , Citation K. Nauka and D. A. Gomez 1995 J. Electrochem. Soc. 142 L98 DOI 10.1149/1.2044258

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1 Hewlett‐Packard Company, Palo Alto, California 94304

Dates

  1. Received 23 January 1995
  2. Revised 30 March 1995

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1945-7111/142/6/L98

Abstract

Surface photovoltage has been employed for in‐line monitoring of Fe contaminants in the front‐end operations of a 0.35 μm IC‐CMOS process. It is shown that SPV can reliably provide information about the Fe impurities despite its inability to detect them in the region adjacent to the water's surface, where IC devices are fabricated.

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