Abstract
In advanced node semiconductor manufacturing, Chemical Mechanical Polish (CMP) is a critical process step in formation of many modules, from fin formation, replacement metal gate (RMG), Self-Aligned Contact (SAC), to interconnect. In each application, CMP's stop-on capability is increasingly seen as an essential element in gauging device integrity, and thus is critical to the successful implementation of a technology. This presentation discusses the critical importance of CMP selectivity, how selectivity is measured and modulated, and how the need of stop-on capability is balanced with the need to make sure complete residue clearing.