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Clement Merckling1, Niamh Waldron1, Sijia Jiang2,1, Weiming Guo1, Kathy Barla1, Marc Heyns1,2, Nadine Collaert1, Aaron Thean1 and Wilfried Vandervorst1,2
© 2014 ECS - The Electrochemical Society
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Citation Clement Merckling et al 2014 ECS Trans. 64 513
DOI 10.1149/06406.0513ecst
38 Total downloads
This study relates to the heteroepitaxy of InP buffer on patterned Si substrates using the selective area growth in trenches approach. We demonstrated in a first part a high control of the two-step InP buffer growth in STI trench width under 50 nm. In a second part, X-ray diffraction reciprocal space maps, rocking curves and pole figures were used to analyze the crystallinity and defect density of the InP layer.
