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A methodology for robust, energy efficient design of Spin-Torque-Transfer RAM arrays at scaled technologies

Published:02 November 2009Publication History

ABSTRACT

In this paper we propose a methodology for energy efficient Spin-Torque-Transfer Random Access Memory (STTRAM) array design at scaled technology nodes. We present a model to estimate and analyze the energy dissipation of an STTRAM array. The presented model shows the strong dependence of the array energy on the silicon transistor width, word line voltage and row/column organization. Using the array energy model we propose a design methodology for STTRAM arrays which minimizes the energy dissipation while maintaining the required robustness in read and write operations at scaled technologies.

References

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  3. Z. Diao et al., "Spin Transfer Switching in Dual MgO Magnetic Tunnel Junctions", Applied Physics Letters, vol. 90, Issue 13, March 2007.Google ScholarGoogle ScholarCross RefCross Ref
  4. A. Driskill-Smith, "STTRAM -- A New Spin on Universal Memory", Future Fab Intl. Report, Sept 2008.Google ScholarGoogle Scholar
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  1. A methodology for robust, energy efficient design of Spin-Torque-Transfer RAM arrays at scaled technologies

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          cover image ACM Conferences
          ICCAD '09: Proceedings of the 2009 International Conference on Computer-Aided Design
          November 2009
          803 pages
          ISBN:9781605588001
          DOI:10.1145/1687399

          Copyright © 2009 ACM

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          Association for Computing Machinery

          New York, NY, United States

          Publication History

          • Published: 2 November 2009

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