Abstract
The present study describes the first detailed evaluation of the rise and the decay time of scintillation phenomenon in In3+- and Ga3+-doped ZnO thin films with different dopant concentrations. In3+-(25, 55, and 141 ppm) and Ga3+-(33, 67, 333, and 1374 ppm) doped ZnO films were grown by the Liquid Phase Epitaxy (LPE) method. The characterization was performed using the pulse X-ray equipped streak camera system. Both the rise and the decay times were shortened considerably with increasing content of In3+ and Ga3+ in the films. However, the scintillation light yield under 241Am α-ray excitation reduced when concentration of In3+ and Ga3+ in the ZnO films was high.