Zero and Controllable Linewidth Enhancement Factor in p-Doped 1.3 µm Quantum Dot Lasers

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Published 24 April 2007 Copyright (c) 2007 The Japan Society of Applied Physics
, , Citation Ryan R. Alexander et al 2007 Jpn. J. Appl. Phys. 46 2421 DOI 10.1143/JJAP.46.2421

1347-4065/46/4S/2421

Abstract

We have studied the effects of δ-p-doping on the operating characteristics of quantum dot (QD) lasers. It is well known that increasing δ-p-doping in a laser core increases both the internal loss and threshold current. For QD lasers however, it has the beneficial effects of increasing differential efficiency and saturated ground state gain. A further consequence of increased δ-p-doping is an ultra low linewidth enhancement factor (LEF) that can be tuned through zero and even made negative with increased doping at low injected current densities.

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10.1143/JJAP.46.2421