High-Critical-Current-Density Epitaxial Films of SmBa2Cu3O7-x in High Fields

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Published 7 January 2005 • Copyright (c) 2005 The Japan Society of Applied Physics
, , Citation Yutaka Yoshida et al 2005 Jpn. J. Appl. Phys. 44 L129 DOI 10.1143/JJAP.44.L129

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Author affiliations

1 Department of Energy and Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2 Department of Materials Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan

3 Electrical Physics Department, Komae Research Laboratory, Central Research Institute of Electric Power Industry, 2-11-1 Iwato-kita, Komae, Tokyo 201-8511, Japan

4 Department of Superconductivity, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8586, Japan

5 Department of Electrical and Information Engineering, Yamagata University, 4-3-16 Jyonan-cho, Yonezawa, Yamagata 992-8510, Japan

6 CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

Dates

  1. Received 8 November 2004
  2. Accepted 3 December 2004
  3. Published

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1347-4065/44/1L/L129

Abstract

The critical current density (Jc) and irreversibility field (Birr) of epitaxial SmBa2Cu3O7-x (SmBCO) films are reported. The Birr and Jc of these films deposited on MgO(100) substrates by pulsed-laser deposition depend critically on the substrate temperature. The use of a thin SmBCO seed layer grown at a high substrate temperature enabled us to obtain fully c-axis-oriented SmBCO films at relatively low temperatures, resulting in a high Jc of 1.7 ×105 A/cm2 of B ∥c at 5 T and 77 K. This value is as high as that of the optimized NbTi superconducting wires achieved at 5 T and 4.2 K.

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10.1143/JJAP.44.L129