Abstract
High-performance p+-poly-SiGe-gate p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide instead of the conventional O2-grown oxide. It is found that NH3-nitrided or N2O-grown oxide can suppress boron penetration in the p+-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.