Abstract
We have studied the growth and properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on both GaAs substrates and InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). (InGaMn)As thin films were ferromagnetic below ∼ 30 K, exhibiting a strong magneto-optical effect. The lattice constant of [(InyGa1-y)1-xMnx]As, whose Mn concentration x is below 4%, is slightly smaller than that of InyGa1-yAs with the same In/Ga content ratio. We have also obtained very smooth surface morphology of nearly lattice-matched (InGaMn)As thin films grown on InP substrates, which is important for application to thin-film-type magneto-optical devices integrated with III–V opto-electronics.