Epitaxial Growth of InAs on Single-Crystalline Mn–Zn Ferrite Substrates

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Copyright (c) 1999 The Japan Society of Applied Physics
, , Citation Takeshi Ikeda et al 1999 Jpn. J. Appl. Phys. 38 L854 DOI 10.1143/JJAP.38.L854

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Author affiliations

1 Department of Applied Chemistry, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

2 Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8653, Japan

3 X-ray Research Laboratory, Rigaku Corporation, Matsubara, Akishima 196-8666, Japan

Dates

  1. Received 1 April 1999
  2. Accepted 18 June 1999

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Abstract

We have grown InAs on single-crystalline Mn–Zn ferrite substrates by molecular beam epitaxy (MBE). In spite of a large lattice mismatch (about 30%), we succeeded in the growth of InAs epitaxial films. Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) measurements have revealed that (111)InAs grows on (110)Mn–Zn ferrite substrates with the in-plane alignment of [112]InAs//[001]Mn–Zn ferrite.

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10.1143/JJAP.38.L854