Investigation on the Surface Electronic States of the Si(001) c(4×2) and c(8×8) Surfaces: An Electron Energy Loss Spectroscopy Study

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Copyright (c) 1997 The Japan Society of Applied Physics
, , Citation Toshitaka Kubo Toshitaka Kubo et al 1997 Jpn. J. Appl. Phys. 36 L975 DOI 10.1143/JJAP.36.L975

1347-4065/36/8A/L975

Abstract

The surface electronic states of the clean (and CO-covered) Si(001) c(4×2) and c(8×8) surfaces at 90 K have been studied by using high resolution electron energy loss spectroscopy. On the clean c(8×8) surface, the loss peaks are observed at 0.3, 0.7 and 1.2 eV. The 1.2 eV loss is sensitive to the CO adsorption, whereas the 0.3 and 0.7 eV losses are not sensitive. These suggest that the c(8×8) structure contains the defects which are not understood by the dimer vacancy model.

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10.1143/JJAP.36.L975