High-Luminance Green-Emitting Thin-Film Electroluminescent Devices Using ZnGa2O4:Mn Phosphor

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Copyright (c) 1995 The Japan Society of Applied Physics
, , Citation Tadatsugu Minami et al 1995 Jpn. J. Appl. Phys. 34 L684 DOI 10.1143/JJAP.34.L684

1347-4065/34/6A/L684

Abstract

A high-luminance green-emitting electroluminescent (EL) device fabricated using a manganese-activated zinc gallate ( ZnGa2O4:Mn) thin-film phosphor in conjunction with a thick barium titanate ceramic insulator has been demonstrated. The green emission was observed in EL devices fabricated using as-deposited ZnGa2O4:Mn thin films prepared by rf magnetron sputtering. A higher luminance was attained for EL devices fabricated using ZnGa2O4:Mn thin films postannealed at 1020° C in an argon atmosphere. A luminance of 710 cd/m2 and a maximum luminous efficiency of 1 lm/W were obtained for a ZnGa2O4:Mn thin-film EL device driven by a sinusoidal voltage at 1 kHz. The device when driven at 60 Hz exhibited a luminance of 230 cd/m2.

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10.1143/JJAP.34.L684