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Suppression of Microloading Effect by Low-Temperature SiO2 Etching

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Copyright (c) 1992 The Japan Society of Applied Physics
, , Citation Masayuki Sato et al 1992 Jpn. J. Appl. Phys. 31 4370 DOI 10.1143/JJAP.31.4370

1347-4065/31/12S/4370

Abstract

The generation mechanism of the microloading effect in magnetron enhanced reactive ion etching (MERIE) and its suppression have been investigated. The suppression of damage to the substrate was achieved with fluorocarbon gases of high molecular weight in MERIE, however, strong microloading effect generation was observed. In this study, it was found that low-temperature etching is the most effective technique for reducing the microloading effect.

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