Inelastic Electron Tunneling Spectroscopy of Langmuir-Blodgett Monolayers on Silicon Substrate

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Copyright (c) 1991 The Japan Society of Applied Physics
, , Citation Kazuhiro Kudo et al 1991 Jpn. J. Appl. Phys. 30 1452 DOI 10.1143/JJAP.30.1452

1347-4065/30/7R/1452

Abstract

An inelastic electron tunneling spectroscopy (IETS) technique is employed to investigate Langmuir-Blodgett monolayers deposited on silicon substrates. Thermally formed SiO2 layers are used as a tunneling barrier to obtain reliable and sensitive signals. IETS data, which are compared to IR and Raman data, show the stability and chemical reactions of organic monolayers at the metal or SiO2 interface.

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10.1143/JJAP.30.1452