Second-Order Piezoresistance Coefficients of n-Type Silicon

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Copyright (c) 1989 The Japan Society of Applied Physics
, , Citation Kazunori Matsuda et al 1989 Jpn. J. Appl. Phys. 28 L1676 DOI 10.1143/JJAP.28.L1676

1347-4065/28/10A/L1676

Abstract

The nonlinear piezoresistance effect of n-type silicon was measured under <100 > and <110 > stresses at room temperature, from which the first- and second-order coefficients in stress were determined. Second-order piezoresistance expressions were deduced from a model based on the stress-dependent carrier transfer between the valleys. The experimental results are in fairly good agreement with the theoretical ones.

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10.1143/JJAP.28.L1676