Magnetoresistance Effect in Tunnel Junctions with Perpendicularly Magnetized D022-Mn3-δGa Electrode and MgO Barrier

, , , , , , , , , and

Published 14 March 2011 • ©2011 The Japan Society of Applied Physics
, , Citation Takahide Kubota et al 2011 Appl. Phys. Express 4 043002 DOI 10.1143/APEX.4.043002

Download Article PDF

Article metrics

512 Total downloads

Share this article

Author affiliations

1 WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

2 Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

3 Department of Applied Physics, Graduate school of Engineering, Tohoku University, Sendai 980-8579, Japan

Dates

  1. Received 6 February 2011
  2. Accepted 28 February 2011
  3. Published

Buy this article in print

Journal RSS
Sign up for new issue notifications
1882-0786/4/4/043002

Abstract

The tunnel magnetoresistance (TMR) effect with a perpendicularly magnetized D022-Mn3-δGa (δ= 0.6) electrode was investigated in epitaxially grown D022-Mn3-δGa (30)/Mg (dMg)/MgO (2)/CoFe (2.5) (nm) magnetic tunnel junctions (MTJs). The maximum TMR ratio of 9.8% (22.1%) was achieved at 300 K (10 K) with dMg = 0.4 nm. The bias voltage dependence of differential conductance spectra suggests the existence of a coherent tunneling process in the MTJs. First principles calculations of band dispersion relations and tunneling transmittance in a Mn3Ga/MgO/Mn3Ga structure were also performed. The results revealed the existence of Δ1-bands in Mn3Ga and demonstrated the possibility of a coherent tunneling process existing in the MTJ.

Export citation and abstract BibTeX RIS

Previous article in issue
Next article in issue
10.1143/APEX.4.043002