Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN

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Published 3 April 2009 ©2009 The Japan Society of Applied Physics
, , Citation Alec M. Fischer et al 2009 Appl. Phys. Express 2 041002 DOI 10.1143/APEX.2.041002

1882-0786/2/4/041002

Abstract

InGaN quantum wells, grown on non-polar m-plane GaN and emitting light at 560 nm, experience lattice mismatch strain relaxation by the generation of stacking faults. Each stacking fault terminates a basal plane from the substrate side, generating misfit dislocations that have a Burgers vector with a 1/2[0001] component. The structural and optical properties of such thin film structures are reported.

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10.1143/APEX.2.041002