Abstract
SnO2 thin films were successfully electrodeposited from an aqueous oxygen-bubbled tin sulfate solution and partnered with electrodeposited SnS thin films to fabricate SnS/SnO2 heterojunction solar cell. The electrodeposited SnS/SnO2 superstrate structure with 250-°C-annealed SnO2 as a window layer exhibited an open circuit voltage of 40–90 mV and a short circuit current density of 1.5–9.7 mA/cm2. The solar conversion efficiency was estimated to be in the order of 10-2–10-1%. The band discontinuities at the SnS/SnO2 interface were evaluated by X-ray photoelectron spectroscopy. The valence band offset was determined to be approximately 1.85 eV. Using this value and the band gaps of individual layers, the conduction band minimum of SnO2 is predicted to be higher than that of SnS by 0.65 eV.