Abstract
Laser doping (LD) can help form emitters at low cost and in high throughput because it operates in air atmosphere and at room temperature. Moreover, LD makes high-efficiency structures in a very simple way by melting and diffusing impurities on selective areas. In this study, evaluation of the relationship between multicrystalline silicon (mc-Si) surface conditions and electric properties is carried out. The results show that the surface electric properties were improved and conversion efficiencies were increased. This was accomplished by changing the surface conditions from rough to smooth by surface etching and vacuum treatment before LD.