Abstract
An RF magnetron sputtering technique was used to deposit Ge and stacked Si/Ge films for infrared imaging sensors; the electrical characteristics of these films were estimated. The cross-sectional scanning electron microscope (SEM) image obtained confirmed that a layered Si/Ge structure was deposited on the SiO2 substrate. The layered film, annealed in an Ar atmosphere, exhibited a large temperature coefficient of resistance (TCR) (-3.63%/K) and a low resistivity (64.5 Ω·cm). The conductivity and TCR of Si/Ge films depend on the thickness of the Ge layer. A significant improvement in TCR was achieved by decreasing the thickness of the Ge layer. Ge thin films sandwiched between amorphous silicon layers facilitate the realization of a noncooled bolometer.