Fabrication of n- and p-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods

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Published 20 April 2009 • Copyright (c) 2009 The Japan Society of Applied Physics
, , Citation Jin-Wook Shin et al 2009 Jpn. J. Appl. Phys. 48 04C151 DOI 10.1143/JJAP.48.04C151

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1 Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, Korea

2 Department of Semiconductor Science and Technology Chonbuk University, Jeonju 561-756, Korea

3 U-terminal Research Team, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-700, Korea

Dates

  1. Received 1 October 2008
  2. Accepted 3 November 2008
  3. Published

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1347-4065/48/4S/04C151

Abstract

Schottky barrier thin-film transistors (SB-TFT) based on polycrystalline silicon (poly-Si) films crystallized by solid phase crystallization (SPC) and excimer laser annealing (ELA) methods were fabricated for system-on-glass (SOG) application. The structure of poly-Si films by ELA and SPC methods was analyzed. The formations of platinum silicide and erbium silicide were developed for p- and n-channel metallic junctions, respectively. The fabricated SB-TFTs have a large on/off current ratio with a low leakage current. The effects of forming gas annealing (FGA) in 2% H2/N2 gas ambient were evaluated. As a result of FGA, significant improvements of electrical characteristics were obtained due to reduction of trap states.

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10.1143/JJAP.48.04C151