Performance Prediction of Graphene-Channel Field-Effect Transistors

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Published 20 January 2009 • Copyright (c) 2009 The Japan Society of Applied Physics
, , Citation Eiichi Sano and Taiichi Otsuji 2009 Jpn. J. Appl. Phys. 48 011604 DOI 10.1143/JJAP.48.011604

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Author affiliations

1 Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan

2 Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan

3 CREST, Japan Science and Technology Agency, Tokyo 107-0075, Japan

Dates

  1. Received 31 July 2008
  2. Accepted 15 October 2008
  3. Published

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Abstract

We compare the threshold voltage and subthreshold-slope characteristics as measures of short-channel effects (SCEs) for graphene-channel field-effect transistors (GFETs) with wide bilayer armchair-graphene film with those for ultrathin-body silicon-on-insulator (UTB-SOI) MOSFETs using a drift-diffusion-based device simulator. The intrinsic delay times for GFETs are also compared with those for UTB-SOI MOSFETs.

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10.1143/JJAP.48.011604