Impact of Strain on Ballistic Current in Si n–i–n Structures

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Published 25 April 2008 Copyright (c) 2008 The Japan Society of Applied Physics
, , Citation Hideki Minari and Nobuya Mori 2008 Jpn. J. Appl. Phys. 47 2621 DOI 10.1143/JJAP.47.2621

1347-4065/47/4S/2621

Abstract

Atomistic transport simulation based on the nonequilibrium Green's function and empirical tight-binding methods has been performed for one-dimensional strained Si n–i–n devices. Simulation results show that the tensile strain enhances the ballistic current and reduces the Zener tunneling current, while the compressive strain gives opposite results.

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10.1143/JJAP.47.2621