Abstract
We have developed a simple technique for forming ultrahigh-density HfO2 nanodots with diameters of less than 3 nm and densities of 6 ×1012 cm-2. The advantage of our method is that density and diameter are controllable. The memory cell in which ultrahigh-density nanodots are used as charge trap nodes shows 2 bits/cell operation without lateral migration of trapped charges. We propose that the ultrahigh-density HfO2 nanodots are suitable as charge storage nodes in future 45 and 32 nm generations.