Abstract
InAsSb quantum dots (QDs) were studied by introducing periodic supply epitaxy. Photoluminescence spectra from InAsSb QDs showed strong emissions even at room temperature. The InAsSb QDs by periodic supply epitaxy allowed the control of emission wavelengths of optical fiber communication systems. The control of the density of InAsSb QDs in the range from 4.5 ×109 to 3.5 ×1010 cm-2 without changing emission wavelengths was demonstrated. These results indicate that periodic supply epitaxy is a useful technique for various optical devices such as QD lasers and single photon emitters.