Abstract
Stoichiometric hydrogenated microcrystalline cubic silicon carbide (µc-3C-SiC:H) films were successfully deposited by hot wire chemical vapor deposition (HWCVD) at a substrate temperature of 280°C using monomethylsilane and hydrogen. The ratio of hydrogen to monomethylsilane (hydrogen dilution ratio) strongly affected the structural and electrical properties of µc-3C-SiC:H films. Subgap absorption measurements on the films revealed that the defect density of the films was influenced by hydrogen dilution ratio. This result indicates that hydrogen dilution ratio is one of the key parameters for obtaining µc-3C-SiC:H with low defect density.