Structural and Ferroelectric Properties of Ba2NaNb5O15 Thin Films on La-Doped SrTiO3 Substrates

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Published 22 September 2004 • Copyright (c) 2004 The Japan Society of Applied Physics
, , Citation Takayuki Kamei et al 2004 Jpn. J. Appl. Phys. 43 6617 DOI 10.1143/JJAP.43.6617

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1 Department of Applied Physics, Tokyo University of Science, Tokyo 162-8601, Japan

2 Department of Electronic Intelligence and Systems, Hachinohe Institute of Technology, Aomori 031-8501, Japan

Dates

  1. Received 12 May 2004
  2. Accepted 1 July 2004
  3. Published

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Abstract

The c-axis-oriented Ba2NaNb5O15 (BNN) thin films were prepared on La0.05Sr0.95TiO3 substrates by pulsed laser deposition. The c-axis orientation and surface roughness of the BNN thin films depend on oxygen gas pressure (Po2) and substrate temperature (Tsub) during the deposition. When Po2 and Tsub were fixed at 5.0 mTorr and 700°C, respectively, the BNN thin film exhibited a strong c-axis orientation and a smooth surface. Its remanent polarization (Pr) and coercive field (Ec) were 2Pr=48.5 µC/cm2 and 2Ec=290 kV/cm, respectively. The band gap of this strongly c-axis-oriented BNN thin film was about 3.1 eV, which accords with that of the BNN single crystal.

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10.1143/JJAP.43.6617