Effect of Interlayer Exchange Coupling on the Curie Temperature in Ga1-xMnxAs Trilayer Structures

, , , , , , , and

Published 27 April 2004 • Copyright (c) 2004 The Japan Society of Applied Physics
, , Citation Shavkat U. Yuldashev et al 2004 Jpn. J. Appl. Phys. 43 2093 DOI 10.1143/JJAP.43.2093

Download Article PDF

Article metrics

29 Total downloads

Share this article

Author affiliations

1 Quantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, Korea

2 Department of Physics, Korea University, Seoul 136-701, Korea

3 Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

Dates

  1. Received 18 August 2003
  2. Accepted 27 November 2003
  3. Published

Buy this article in print

Journal RSS
Sign up for new issue notifications
1347-4065/43/4S/2093

Abstract

We have investigated the effect of interlayer exchange coupling on the Curie temperature of ferromagnetic (FM) layers in Ga1-xMnxAs(Be)/GaAs/Ga1-xMnxAs trilayer structures. The FM layers in the trilayers contained the same concentration of Mn (x≈0.046), but the top ferromagnetic layer was additionally doped with Be. For this x the Curie temperature observed on a control single-layer sample of Be-doped Ga0.954Mn0.046As is lower than that of an undoped sample. However, in the case of trilayers, we observed that the Curie temperature of the Ga0.954Mn0.046As(Be) layer increased with decreasing thickness of the GaAs spacer separating the two FM layers. This increase in Curie temperature is due to the exchange coupling between the ferromagnetic layers mediated by the spin-polarized free carriers (holes) through the thin insulating spacer.

Export citation and abstract BibTeX RIS

Previous article in issue
Next article in issue
10.1143/JJAP.43.2093