Abstract
High-quality B-doped homoepitaxial diamond films have been synthesized by microwave plasma chemical-vapor-deposition (CVD) using a mixture consisting of CH4, H2, and trimethylboron B(CH3)3 diluted by H2 gas. These films have been obtained on the basis of the approach that high-quality diamond films should be grown in a clean CVD system. Hall-effect measurements of the film show that the Hall mobility exceeds about 1800 cm2/V·s when the hole concentration is 2.3×1014 cm-3 at room temperature (290 K) and about 3300 cm2/V·s at 170 K. These results indicate that the quality of the present B-doped CVD films is comparable with or better than that of high-quality natural diamonds.
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