Abstract
The fatigue behavior in the sol-gel derived Pb0.99[(Zr0.6Sn0.4)0.97Ti0.03]0.98Nb0.02O3 (40/3/2) and Pb0.99[(Zr0.6Sn0.4)0.85Ti0.15]0.98Nb0.02O3 (40/15/2) thin films deposited on the platinized silicon substrates was investigated. The thin film of the 40/3/2 composition represented a double hysteresis loop, while the 40/15/2 composition represented a single ferroelectric hysteresis loop. The thin film having the antiferroelectric phase showed less fatigue than that having the ferroelectric phase. It can be explained that the antiferroelectrics have less stress due to 180° domain switching compared to the ferroelectrics.