Optimum Electrode Materials for Ta2O5 Capacitors for High- and Low-Temperature Processes

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Copyright (c) 1994 The Japan Society of Applied Physics
, , Citation Hideaki Matsuhashi Hideaki Matsuhashi and Satoshi Nishikawa Satoshi Nishikawa 1994 Jpn. J. Appl. Phys. 33 1293 DOI 10.1143/JJAP.33.1293

1347-4065/33/3R/1293

Abstract

In this paper, we describe the effects of electrode materials on the leakage current of Ta2O5 films, and show optimum electrode materials for high- and low-temperature processes. The leakage current depends on the electrode material and varies with the annealing temperature. The leakage current is mainly determined by the work function of the electrode before and after low-temperature annealing (400° C). On the other hand, after high-temperature annealing (800° C), the leakage current is also affected by the reaction between Ta2O5 and the electrode. From the viewpoint of the leakage current, TiN and Mo (or MoN) are optimum materials for low- and high-temperature processes, respectively.

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10.1143/JJAP.33.1293