Abstract
Stress in reactively sputter-deposited NbCxN1-x films was measured. It was found that the stress in NbCxN1-x films strongly depended on the total sputtering gas pressure Pt. Films deposited at Pt≥2.0 Pa had very small stress values (<2.0×108 Pa). On the other hand, films deposited at Pt≤1.1 Pa had large compressive stress values. The results of X-ray diffraction measurements showed that the stress in NbCxN1-x films was strongly related to the ratio of (111) and (200) grains in the films. We also observed the surface morphology of deposited films by scanning electron microscopy and found that the stress in deposited films is affected by the microstructure of the films.