Oxidation of GaAs Surface by Oxygen Plasma and Its Application as an Antireflection Layer

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Copyright (c) 1991 The Japan Society of Applied Physics
, , Citation Wen-An Loong Wen-An Loong and Hong-Long Chang Hong-Long Chang 1991 Jpn. J. Appl. Phys. 30 L1319 DOI 10.1143/JJAP.30.L1319

1347-4065/30/7B/L1319

Abstract

The optical reflectivity of a GaAs wafer is found to decrease from about 45% down to about 5% for both the g-line and i-line by oxidation in low-power oxygen plasma at 300°C for 4 hours. The oxide layer on the GaAs top surface used as an in situ antireflection layer for optical microlithography is demonstrated to be effective.

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