Abstract
We have examined the electron wave reflectivities of the AlGaInP-based multi-quantum barrier (MQB) with changing of several parameters such as well and barrier thickness and pair number. We have optimized the MQB structure by clarifying several choices of the MQB parameters. Even in the 630-nm-range AlGaInP lasers, we can obtain effective potential barrier height 2 times greater than the classical potential barrier height U0 in the MQB composed of relatively nallow superlattices. The increased potential barrier height is about 114 meV and this suggests the possibility of higher-temperature CW operation of 630-nm-range AlGaInP lasers.