Abstract
Slip lines in the molecular beam epitaxial wafer bonded with In during the growth have been eliminated by using (111)-oriented GaAs substrates instead of the usual (100)-oriented ones. AlGaAs double-heterostructure and quantum well lasers were grown on (100)- and 0.5°-misoriented (111)B substrates. The yield of reliable lasers is much higher for (111)-oriented devices than that for (100)-oriented ones, possibly due to the elimination of local defects such as slip lines.