High Reliability in AlGaAs Laser Diodes Prepared by Molecular Beam Epitaxy on 0.5°-Misoriented (111)B Substrates

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Copyright (c) 1988 The Japan Society of Applied Physics
, , Citation Toshiro Hayakawa et al 1988 Jpn. J. Appl. Phys. 27 L889 DOI 10.1143/JJAP.27.L889

1347-4065/27/5A/L889

Abstract

Slip lines in the molecular beam epitaxial wafer bonded with In during the growth have been eliminated by using (111)-oriented GaAs substrates instead of the usual (100)-oriented ones. AlGaAs double-heterostructure and quantum well lasers were grown on (100)- and 0.5°-misoriented (111)B substrates. The yield of reliable lasers is much higher for (111)-oriented devices than that for (100)-oriented ones, possibly due to the elimination of local defects such as slip lines.

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10.1143/JJAP.27.L889